Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-11-16
1989-10-17
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156345, 156627, 156643, 156646, 156656, 156667, 20419234, 204298, B44C 122, C03C 1500, C03C 2506, C23F 102
Patent
active
048744603
ABSTRACT:
Apparatus for modifying a patterned film, composed of an ion source for producing an ion beam which is focused and caused to impinge upon a sample to microscopically machine a small region upon the surface of the sample; scanning electrodes and a scanning control cirucit for scanning the focused ion beam; a detector that detects the secondary charged particles emanating from the sample in response to the irradiation; and a display device for displaying the pattern formed upon the sample according to the output from the detector. The apparatus further includes a nozzle for spraying etching gas against only a certain portion of the pattern when the focused ion beam is caused to fall upon the certain portion of the pattern, the gas being activated by the ion beam and capable of etching the material of the film upon which the pattern is formed. The focused ion beam that irradiates and scans the sample is not permitted to move from one spot to a neighboring spot until a given period of time elapses. Thus, a desired portion of the patterned film is rapidly and cleanly removed while minimizing the amount of the etching gas admitted into the apparatus.
REFERENCES:
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patent: 4457803 (1984-07-01), Takigawa
patent: 4559096 (1985-12-01), Friedman et al.
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patent: 4734158 (1988-03-01), Gillis
patent: 4756794 (1988-07-01), Yoder
WO-A-8 602 774 (Ion Beam Systems), Figures; p. 4, line 19-p. 5, line 23, p. 12, lines 12-24; p. 9, lines 1-3, International Publication date May 9, 1986.
Journal of Vacuum Science & Technology/B, vol. 3, No. 1, second series, Jan./Feb. 1985, pp. 67-70, Woodbury, N.Y., US; Y. Ochiai, et al.: "Pressure and Irridiation Angle Dependence of Maskless Ion Beam Assisted Etching of GaAs and Si", p. 67, paragraph II.
Nakagawa Yoshitomo
Yamaoka Takehiro
Powell William A.
Seiko Instruments Inc.
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