Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-10-24
1994-02-22
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, H01L 2702, H01L 2978
Patent
active
052890252
ABSTRACT:
A wide variety of integrated circuit applications exist for boosted nodes, wherein a voltage is boosted above the power supply level. Typical uses include clock driver circuits in microprocessors, row lines in dynamic and static memory chips, and substrate bias generators. However, in the prior art, only n-channel transistors have been usable to boost nodes above the positive power supply level, to prevent forward-biasing the drain-to-substrate diode. The present invention allows a p-channel device source/drain region to be connected to a boosted node. This is accomplished by also boosting the voltage of the n-tub in which the device is formed, thereby allowing the p+ source/drain regions to be boosted without latch-up or other problems. Similarly, n-channel devices may be connected to nodes boosted more negative than V.sub.SS.
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CMOS Digital Circuit Technology by Masakazu Shoji, Computing Science Research Center, AT&T Bell Laboratories, pp. 26, 27, 28 and 29, 1988, Prentice Hall, Englewood Cliffs, New Jersey.
AT&T Bell Laboratories
Fox James H.
Munson Gene M.
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