Compound semiconductor device controlled by MIS gate, driving me

Details Compound semiconductor device controlled by MIS gate, driving me Compound semiconductor device controlled by MIS gate, driving me

1996-03-07

1998-06-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257140, 257368, 257168, H01L 2976

Patent

active

057675554

ABSTRACT:
A compound semiconductor device including a MISFET and a thyristor connected in series wherein either the withstanding voltage between the MISFET p base layer and the thyristor p base layer is set lower than the withstanding voltage of the MISFET, the MISFET is turned off under a condition that the MISFET p base layer and the thyristor p base layer are connected via a p channel or the lateral resistance of the thyristor p base layer is reduced, thereby the safe operating region of the compound semiconductor device is extended.

REFERENCES:
patent: 5357120 (1994-10-01), Mori
N. Iwamuro et al., "A Study of EST's Short-Circuit SOA", Proceeding of 1993 Int'l Conferences on Power Semiconductor Devices and ICs, Tokyo. May 1993 pp. 71-76.
S.M. Sze, "Physics of Semiconductor Devices", 2nd ed. John Wiley & Sons, 1981, p. 108., Dec. 1981.

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