Flat cell mask ROM having compact select transistor structure

Details Flat cell mask ROM having compact select transistor structure Flat cell mask ROM having compact select transistor structure

1996-05-15

1998-06-16

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257346, 257391, 257754, H01L 2976

Patent

active

057675538

ABSTRACT:
A method of manufacture for flat-cell Mask ROM devices on a silicon semiconductor substrate covered with a first gate oxide layer comprises, forming a first conductor structure on the first gate oxide layer, forming a buried conductive structure within the substrate by ion implantation with a portion thereof in juxtaposition with the first conductor structure, etching away the exposed surfaces of the first gate oxide layer exposing portions of the semiconductor, forming a second gate oxide layer on the surface of the semiconductor, and forming a second conductor structure on the second gate oxide layer.

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patent: 5117389 (1992-05-01), Yiu
patent: 5151375 (1992-09-01), Kazerounian et al.
patent: 5202848 (1993-04-01), Nakagawara
patent: 5291435 (1994-03-01), Yu
patent: 5318921 (1994-06-01), Hsue et al.
Disclosed Figures 1 and 2.

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