Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-16
1998-06-16
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257317, 257318, 365145, H01L 29788, G11C 1122
Patent
active
057675430
ABSTRACT:
A layered bismuth ferroelectric structure (12) and a method for forming the bismuth layered ferroelectric structure (12). A monolayer (12A) of bismuth is formed in intimate contact with a single crystalline semiconductor material (11). A layered ferroelectric material (12) is grown on the monolayer (12A) of bismuth such that the monolayer (12A) of bismuth becomes a part of the layered ferroelectric material (12). The ferroelectric material (12) forms a layered ferroelectric material which is not a pure perovskite, wherein the crystalline structure at the interface between the single crystalline semiconductor material (11) and the monolayer (12A) of bismuth are substantially the same.
REFERENCES:
patent: 2791760 (1957-05-01), Ross
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5070026 (1991-12-01), Greenwald et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5225031 (1993-07-01), McKee et al.
patent: 5423285 (1995-06-01), Paz de Araujo et al.
patent: 5426075 (1995-06-01), Perino et al.
patent: 5434102 (1995-07-01), Watanabe et al.
patent: 5439845 (1995-08-01), Watanabe et al.
patent: 5450812 (1995-09-01), McKee et al.
patent: 5468679 (1995-11-01), Paz de Araujo et al.
patent: 5468684 (1995-11-01), Yoshimori et al.
patent: 5471363 (1995-11-01), Mihara
patent: 5481490 (1996-01-01), Watanabe et al.
patent: 5482003 (1996-01-01), McKee et al.
patent: 5519234 (1996-05-01), Paz de Araujo et al.
patent: 5579258 (1996-11-01), Adachi
"Piezoelectric Ceramics" Bernard Jaffe, William Cook, Jr. and Hans Jaffe, Academic Press, London and New York, 1971, pp. 213-235.
"Crystal Structure of Bi.sub.4 Ti.sub.3 O.sub.12 ", J. F. Dorrian, R. E. Newnham, D. K. Smith and M. I. Kay, Ferroelectronics, Gordon and Breach Science Publishers Ltd., Norwich, England, 1971, vol. 3, pp. 17-27.
Hallmark Jerald A.
Marshall Daniel S.
Ooms William J.
Dover Rennie William
Motorola Inc.
Whitehead Carl W.
LandOfFree
Ferroelectric semiconductor device having a layered ferroelectri does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric semiconductor device having a layered ferroelectri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric semiconductor device having a layered ferroelectri will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1728995