Semiconductor component including MOSFET with asymmetric gate el

Details Semiconductor component including MOSFET with asymmetric gate el Semiconductor component including MOSFET with asymmetric gate el

2000-02-11

2000-11-28

Bowers, Charles

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257317, 438257, H01L 29788

Patent

active

061539058

ABSTRACT:
A semiconductor component includes an asymmetric transistor having two lightly doped drain regions (1300, 1701), a channel region (1702), a source region (1916) located within the channel region (1702), a drain region located outside the channel region (1702), a dielectric structure (1404) located over at least one of the two lightly doped drain regions (1300, 1701), two gate electrodes (1902, 1903) located at opposite sides of the dielectric structure (1404), a drain electrode (1901) overlying the drain region (1915), and a source electrode (1904) overlying the source region (1916). The semiconductor component also includes another transistor having an emitter electrode (122) located between a base electrode (121) and a collector electrode (123) where the base electrode (121) is formed over a dielectric structure (1405).

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C. Tsai et al., "Split Gate MOSFETs in BiCMOS Power Technology for Logic Level Gate Voltage Application", 1999 IEEE-ISPSD Conference, May 26-28, 1999 (Toronto, Canada), pp. 85-88.

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