Ferroelectric capacitor, method of manufacturing same and memory

Details Ferroelectric capacitor, method of manufacturing same and memory Ferroelectric capacitor, method of manufacturing same and memory

1998-07-08

2000-11-28

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 438 3, 438240, H01L 2976

Patent

active

061538981

ABSTRACT:
A ferroelectric capacitor and a method of manufacturing the same are provided for reducing a crystal grain size while maintaining excellent ferroelectric properties so as to achieve a reduction in device size. A lower electrode, a ferroelectric layer and an upper electrode are formed on a substrate. The ferroelectric layer is formed into a plurality of stacked layers including an oxide of a layered crystal structure (Bi.sub.x (Sr, Ca, Ba).sub.y (Ta, Nb).sub.2 O.sub.9 .+-..sub.d). Proportion `y` of (Sr, Ca, Ba) in at least one of the layers is different from those of the other layers. That is, a variation in proportion `y` of (Sr, Ca, Ba) is provided in the ferroelectric layer. As a result, excellent ferroelectric properties are obtained and the crystal grain size of the oxide is reduced.

REFERENCES:
patent: 5736759 (1998-04-01), Haushalter
patent: 5833745 (1998-11-01), Atsuki et al.
patent: 5994153 (1999-11-01), Nagel et al.
patent: 6043526 (2000-03-01), Ochiai

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