Multi-layer lead frame for a semiconductor device with contact g

Details Multi-layer lead frame for a semiconductor device with contact g Multi-layer lead frame for a semiconductor device with contact g

1991-09-03

1993-08-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257693, 257709, 257700, H01L 2348

Patent

active

052352099

ABSTRACT:
A multi-layer lead frame for a semiconductor device comprises a lead frame body made of a metal strip having a first opening and a plurality of inner leads having respective innertips which define the opening. A metal plane independent from the lead frame body and adhered to the inner leads by an insulation adhesive film, has an inner periphery defining a second opening corresponding to the first opening. The inner periphery of the insulation film protrudes slightly from the inner tips of the inner leads.

REFERENCES:
patent: 5032895 (1991-07-01), Horiuchi et al.
patent: 5105257 (1992-04-01), Michii

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