Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1990-11-01

1993-08-10

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257758, 257773, 257776, H01L 2968, H01L 2710, H01L 2712, H01L 2348

Patent

active

052352005

ABSTRACT:
Herein disclosed is a semiconductor integrated circuit device having a nonvolatile memory function and including a memory cell composed of a field effect transistor having a floating gate electrode and a control gate electrode. A first insulating film for element isolation is buried between the floating gate electrodes. The size of the drain region of the field effect transistor is substantially regulated by both the gap between the first insulating films adjacent to the drain region and the gap between the control gate electrodes adjacent to the drain region. The gaps between the data line at the connection portion with the drain region and the first insulating films individually adjacent to the drain region are equalized. The gaps between the data line at the connection portion with the drain region and the floating gate electrodes or control gate electrodes individually adjacent to the drain region are equalized.

REFERENCES:
patent: 4663645 (1987-05-01), Komori et al.
IEDM Technical Digest #26.1, pp. 616-619 Dec. 1985 by Mukherjee et al.
A. T. Mitchell et al., "A New Self-Aligned Planar Array Cell for Ultra High Density, EPROMS", 1987 IEDM Tech. Dig.; pp. 548-551.

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