Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-08-01
1997-05-20
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257342, 257378, 257142, 257655, H01L 2976
Patent
active
056314833
ABSTRACT:
A power device integrated structure includes a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type superimposed over the substrate, a plurality of first doped regions of the first conductivity type formed in the semiconductor layer, and a respective plurality of second doped regions of the second conductivity type formed inside the first doped regions. The power device includes: a power MOSFET having a fisrt electrode region formed by the second doped regions and a second electrode region formed by the semiconductor layer; a first bipolar junction transistor having an emitter, a base and a collector respectively formed by the substrate, the semiconductor layer and the first doped regions; and a second bipolar junction transistor having an emitter, a base and a collector respectively formed by the second doped regions, the first doped regions and the semiconductor layer. The doping profiles of the semiconductor substrate, the semiconductor layer, the first doped regions and the second doped regions are such that the first and second bipolar junction transistors have respective first and second common base current gains sufficiently high to cause the bipolar junction transistors to be biased in the high injection region, so that carriers are injected from the substrate into the semiconductor layer and from the second doped regions, through the first doped regions, into the semiconductor layer to modulate the conductivity of the second electrode of the power MOSFET; the fast and second common base current gains summed are less than unity to prevent a parasitic thyristor from triggering on.
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Patent Abstracts of Japan, vol. 12, No. 225 (E-626)(3072) Jun. 25, 1988 & JP-A-63 018 675 Toshiba Corp.
Ferla Giuseppe
Frisina Ferruccio
Morris James H.
Prenty Mark V.
SGS--Thomson Microelectronics S.r.l.
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