Method of manufacturing a multi-layer film each layer having sin

Details Method of manufacturing a multi-layer film each layer having sin Method of manufacturing a multi-layer film each layer having sin

1996-03-12

1998-06-16

Dutton, Brian

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

118728, C23C 1600, H01L 2120, H01L 2136

Patent

active

057670021

ABSTRACT:
A multi-layer film is formed on a semiconductor wafer using chambers of a multi-chamber sputtering system by using wafer clampers of different shape. Wafer clampers each have a shield area near at the orientation flat of the wafer and a recess in the shielding area at a different position. At each process of sequential film forming processes, a single layer area of the multi-layer film is formed on the semiconductor wafer at the area corresponding to the recess. The film quality of each layer can be measured at the single layer area. A semiconductor device manufacturing method is provided which can easily and precisely measure the quality of each layer of a multi-layer film.

REFERENCES:
patent: 5421401 (1995-06-01), Sherstinsky et al.

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