Process to improve adhesion of HSQ to underlying materials

Details Process to improve adhesion of HSQ to underlying materials Process to improve adhesion of HSQ to underlying materials

1999-10-12

2000-11-28

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438763, 438780, 438781, 438782, 438788, H01L 214763

Patent

active

061535125

ABSTRACT:
A process for forming an intermetal dielectric, (IMD), layer, comprised of an overlying silicon oxide layer, and an underlying low k dielectric layer, such as hydrogen silsesquioxane, (HSQ), has been developed. The process features the use of a series of plasma treatments, performed in a nitrogen containing ambient, used to improve the adhesion of the IMD layer, to underlying materials. A first plasma treatment is performed on a thin insulator layer, prior to application of the HSQ layer. The plasma treatment roughens the top surface of the thin insulator layer, resulting in improved adhesion of the HSQ layer to the thin insulator layer. A second plasma treatment is performed to the HSQ layer, prior to deposition of the overlying, thick silicon oxide layer, allowing improve adhesion of the thick silicon oxide layer, to the underlying HSQ layer, to be achieved.

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