Method of manufacturing a twin well semiconductor device with im

Details Method of manufacturing a twin well semiconductor device with im Method of manufacturing a twin well semiconductor device with im

1993-02-25

1998-06-16

Niebling, John

Fishing, trapping, and vermin destroying

437 71, H01L 2170, H01L 2700, H01L 21302, H01L 2176

Patent

active

057669708

ABSTRACT:
A method for manufacturing semiconductor devices having a twin well structure in which the N-well and P-well regions of the substrate receive differential processing to set the final planarity of the semiconductor device. The differential processing permits the relative vertical position of the N-well and P-well surfaces to be controlled as needed to reduce the demands on subsequent processing steps. The relative vertical position of the N-well and P-well surfaces are preferentially set to improve the planarity of the semiconductor device during subsequent manufacturing processes, particularly photolithographic and metallization processes.

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