Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-07-16

2000-11-28

Smith, Matthew

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438400, 438404, H01L 2176

Patent

active

061534935

ABSTRACT:
A field oxide film which is fine and having smaller upheaval of a bird's head is formed, so as to improve electrical characteristic of a conductive layer formed with end portions positioned on the field oxide film. A planarizing silicon film is formed on a silicon nitride film and a thermal oxide film, so as to planarize a concave generated between the thermal oxide film and a silicon nitride film. The planarizing silicon film is thermally oxidized, so as to form a planarizing thermal oxide film integrated with the thermal oxide film. Thereafter, the planarizing thermal oxide film is etched back to form the field oxide film, and the silicon nitride film and a polycrystalline silicon film are removed. Thereafter, the conductive layer with end portions positioned on the field oxide film is formed.

REFERENCES:
patent: 5103273 (1992-04-01), Gill et al.
patent: 5252511 (1993-10-01), Bhan et al.
patent: 5338968 (1994-08-01), Hodges et al.
patent: 5397733 (1995-03-01), Jang
patent: 5447885 (1995-09-01), Cho et al.
patent: 5472905 (1995-12-01), Paek et al.
patent: 5508541 (1996-04-01), Hieda et al.
patent: 5543343 (1996-08-01), Bryant et al.
patent: 5668403 (1997-09-01), Kunikiyo
patent: 5792687 (1998-08-01), Jeng et al.
patent: 5942779 (1999-08-01), Okita

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