Thin film deposition method

Details Thin film deposition method Thin film deposition method

1991-09-09

1993-08-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437105, 437106, 118724, H01L 2120, H01L 21203

Patent

active

052348628

ABSTRACT:
A thin film deposition method consists of depositing a thin film on a wafer by supplying a reactant gas molecules toward and onto the wafer within a vacuum vessel or chamber. The pressure within the vacuum vessel is set to the pressure under which the mean free path (d) of the molecules contained in the supplied reactant gas can be longer than the shortest distance (L) between the wafer and the wall of the vacuum vessel exposed to the vacuum side, or d>L. The temperature of the wafer is set to the temperature (T sub) at which the reactant gas can cause substantially the thermally decomposing reaction. The temperature of the vacuum side-exposed wall of the vacuum vessel (T wall) is set to a temperature range having the lower limit higher than the temperature (T vap) at which the saturated vapor pressure can be maintained to be equal to the partial pressure of the molecules contained in the reactant gas, and having the upper limit lower than the temperature of the wafer (T sub), or T vap<T wall<T sub.

REFERENCES:
patent: 4137865 (1979-02-01), Cho
patent: 4829021 (1989-05-01), Fraas et al.
patent: 5154773 (1992-10-01), Furusawa
patent: 5160545 (1992-11-01), Maloney et al.
M. Ishida et al., Journal of Applied Physics, 64(4) 2087-2091 (Aug. 15, 1988).
H. Hirayama et al., Applied Physics Letters, 56(12) 1107-1109 (Mar. 19, 1990).
Patent Abstracts of Japan, 7(236) (E-205) (1381) (Oct. 20, 1983).

Affiliated with

Also associated with

Rating

Thin film deposition method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film deposition method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film deposition method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724911