Sloped spacer for MOS field effect devices comprising reflowable

Details Sloped spacer for MOS field effect devices comprising reflowable Sloped spacer for MOS field effect devices comprising reflowable

1992-03-30

1993-08-10

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437982, 437240, 257335, 257336, 148DIG133, H01L 21336

Patent

active

052348520

ABSTRACT:
A method for forming field effect devices having lightly doped drain regions requires only a single dope and implant step. After patterning of the polycrystalline silicon gates, sloped sidewall spacers are formed alongside the gates. These spacers have a relatively linear slope from the top corners of the polycrystalline silicon gates to the substrate. A single implant of dopant results in heavily doped regions beyond the sidewall spacers with more lightly, and shallowly, doped regions next to the channel.

REFERENCES:
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4728617 (1988-03-01), Woo et al.
patent: 4755479 (1988-07-01), Miura
patent: 4764477 (1988-08-01), Chang et al.
patent: 4886765 (1989-12-01), Chen et al.
patent: 4948744 (1990-08-01), Kita
patent: 4981810 (1991-01-01), Fazan et al.

Affiliated with

Also associated with

Rating

Sloped spacer for MOS field effect devices comprising reflowable does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sloped spacer for MOS field effect devices comprising reflowable, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sloped spacer for MOS field effect devices comprising reflowable will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724848