Semiconductor device

Details Semiconductor device Semiconductor device

1997-10-31

2000-03-14

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257341, H01L 2976, H01L 31062

Patent

active

060376333

ABSTRACT:
A UMOS semiconductor device has a surge absorbing structure around a drain lead region. A surge absorbing region such as an anode region or a region forming a punch-through or reach-through structure is formed near the drain lead region, and surrounded by a source region or source regions. The surge absorbing region forms a diode such as a zener diode with a highly doped buried layer or a drain region. With the diode, the surge absorbing structure controls the electric field around the drain lead region and thereby protects the gate insulating film from being damaged by a drain surge.

REFERENCES:
patent: 3975221 (1976-08-01), Rodgers
patent: 4438448 (1984-03-01), Harrington et al.
patent: 5034785 (1991-07-01), Blanchard
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5283454 (1994-02-01), Cambou
patent: 5352915 (1994-10-01), Hutchings et al.
patent: 5378914 (1995-01-01), Ohzu et al.
patent: 5682048 (1997-10-01), Shinohara et al.

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