Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-05
2000-03-14
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257139, 257401, 257490, 257495, H01L 2974, H01L 2976, H01L 2358
Patent
active
060376325
ABSTRACT:
A semiconductor device is disclosed, which comprises a first main electrode, a second main electrode, a high-resistance semiconductor layer of first conductivity type interposed between the first main electrode and the second main electrode, and at least a buried layer of second conductivity type selectively formed in the semiconductor layer, extending at substantially right angles to a line connecting the first and second main electrodes, comprising a plurality strips functioning as current paths and set at a potential different from a potential of any other electrode when a depletion layer extending from a region near the first main electrode reaches the buried layer.
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Jun-ichi Nishizawa, et al. "Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)", IEEE Transactions On Electron Devices, (pp. 185-197), Apr., 1975, vol. ED-22 No. 4.
Michael S. Adler, et al. "Theory and Breakdown Voltage for Planar Devices with a Single Field Limiting Ring", IEEE Transactions On Electron Devices, (pp. 107-113), Feb., 1977, vol. ED-24 No. 2.
Inoue Tomoki
Ohashi Hiromichi
Omura Ichiro
Kabushiki Kaisha Toshiba
Nadav Ori
Thomas Tom
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