Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-24
2000-03-14
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, 257397, 257622, H01L 2976
Patent
active
060376295
ABSTRACT:
An IGFET with a gate electrode in a transistor trench adjacent to an isolation trench is disclosed. The trenches are formed in a semiconductor substrate. A gate insulator is on a bottom surface of the transistor trench, insulative spacers are adjacent to opposing sidewalls of the transistor trench, and the gate electrode is on the gate insulator and spacers and is electrically isolated from the substrate. Substantially all of the gate electrode is within the transistor trench. A source and drain in the substrate are beneath and adjacent to the bottom surface of the transistor trench. The isolation trench is filled with an insulator and provides device isolation for the IGFET. Advantageously, the trenches are formed simultaneously using a single etch step.
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Cheek Jon D.
Gardner Mark I.
Kadosh Daniel
Advanced Micro Devices , Inc.
Eckert II George C.
Holloway William W.
Saadat Mahshid
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