Method of forming shallow diffusion layers in a semiconductor su

Details Method of forming shallow diffusion layers in a semiconductor su Method of forming shallow diffusion layers in a semiconductor su

1996-11-12

1999-06-22

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438520, 438305, 438528, H01L 21336

Patent

active

059151960

ABSTRACT:
A method of forming shallow diffusion layers in a semiconductor substrate is provided wherein the shallow diffusion layers are positioned in the vicinity of edge portions of a gate electrode and laterally extend from source/drain diffusion layers having a bottom level deeper than the shallow diffusion layers. The above method comprises the following steps. Crystal defects are selectively formed at least in predetermined shallow regions positioned in a surface region of the semiconductor substrate and in the vicinity of the edge portions of the gate electrode. The predetermined shallow regions are laterally in contact with impurity-introduced deep regions having been formed. The predetermined shallow regions have a bottom level shallower than the impurity-introduced deep regions. Subsequently, the semiconductor substrate is subjected to a heat treatment not only to cause a vertical diffusion of an impurity from the impurity-introduced regions so as to selectively form the source/drain diffusion layers but also to cause a rate-increased lateral diffusion of the impurity from the impurity-introduced regions through the predetermined shallow regions so as to selectively form the shallow diffusion layers.

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S. Wolf, Silicon Processing for the VLSI Era, vol. II, pp. 436-437, Jun. 1990.
H.S. Chao et al., Appl. Phys. Lett., 68(25)(1996)3570 "Influence . . . amorphizing implants on . . . boron diffusion in silicon" Jun. 1996.

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