Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

1995-09-29

1999-06-22

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438487, H01L 2100, H01L 2120

Patent

active

059151749

ABSTRACT:
The solution (for example, a nickel acetate solution) containing a metal element such as nickel which accelerates the crystallization of silicon is applied to an amorphous silicon film by spin coating using a mask, to retain nickel in contact with the surface of the amorphous silicon film. Then, heating treatment is performed to crystallize selectively the amorphous silicon film, so that an amorphous region and a crystalline region are formed in the silicon film. In this state, the silicon film is heated to diffuse the metal element from the crystalline region to the amorphous region, thereby decreasing a concentration of the metal element in the crystalline region.

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