Method of manufacturing a semiconductor device using an implanta

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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437 35, 437 67, H01L 21312

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active

053063902

ABSTRACT:
For manufacturing an implantation mask on a semiconductor surface which is provided with grooves, a positive photoresist is provided on the surface. Portions of the photoresist which are to form the implantation mask are illuminated in a first step and rendered insoluble in the developer in an image reversal step. The photoresist is then illuminated without mask and developed, so that the portions not illuminated during the first step are removed. The implantation mask thus obtained has a receding profile, the openings at the area of the grooves becoming wider in the direction of the bottom of the grooves.

REFERENCES:
patent: 4466178 (1984-08-01), Soclof
patent: 4466180 (1984-08-01), Soclof
patent: 4693781 (1987-09-01), Leung et al.
patent: 4756793 (1988-07-01), Peek
"Image Reversal Applications for Micron and Submicron Patterning" Proc. Electrochem. Soc. 1987 (VLSI) pp. 190-210.

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