Method for pulling up semiconductor single crystal

Details Method for pulling up semiconductor single crystal Method for pulling up semiconductor single crystal

1991-06-12

1994-04-26

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 1566204, 422249, C30B 1522

Patent

active

053063872

ABSTRACT:
A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the rotational speed of said quartz crucible at a level exceeding 5 rpm and varying the intensity of said magnetic field applied to said molten semiconductor according to the length of pull of said single crystal rod.

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patent: 4849188 (1989-07-01), Takasu et al.
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Electronics: "Magnetic Field Breeds Skylab-like Semiconductors"; Cohen, (1980) pp. 83-84.

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