Trench-isolation type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257350, 257351, 257506, 257508, H01L 2976, H01L 2994

Patent

active

059145170

ABSTRACT:
A semiconductor device and a method of manufacturing the same. The semiconductor device comprises: a semiconductor substrate; an impurity injection layer formed in a surface of the semiconductor substrate; and a trench formed in the impurity injection layer for defining a plurality of element formation regions isolated one another by the trench, wherein the impurity injection layer extends to a depth inside the semiconductor substrate deeper at a first area below the trench than at a second area below each of the element formation regions.

REFERENCES:
patent: 4624047 (1986-11-01), Tani
patent: 5225707 (1993-07-01), Komaru et al.
patent: 5365082 (1994-11-01), Gill et al.
Gilbert et al., Latch-up Performance of a Sub-0.5 Micron Inter-well Deep Trench Technology, IEDM 1993, pp. 731-734.

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