Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1996-12-13

1999-06-22

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257305, 257350, H01L 2701

Patent

active

059145102

ABSTRACT:
A semiconductor memory device having a first memory cell and a second memory cell, includes a first semiconductor substrate having a first conductivity type, a first layer having a second conductivity type serving as a buried plate electrode, a first capacitor insulating film in the first memory cell, a second capacitor insulating film in the second memory cell, a second layer contacting the first capacitor insulating film having a second conductivity type serving as a memory node, a third layer contacting the second capacitor insulating film having a second conductivity type serving as a memory node, wherein an upper surface of the semiconductor substrate and an upper surface of the second layer and the third layer form a step height.

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