Manufacturing method and device for a polycrystalline silicon

Details Manufacturing method and device for a polycrystalline silicon Manufacturing method and device for a polycrystalline silicon

1995-09-15

1997-03-18

Kunemund, Robert

Fishing, trapping, and vermin destroying

117 8, 117 53, 117931, H01L 2120

Patent

active

056122519

ABSTRACT:
In a manufacturing method and device for a polycrystalline silicon, the manufacturing method forms amorphous silicon on the substrate, and an adiabatic layer between substrate and amorphous silicon if needed. The amorphous silicon is preliminarily heated and melted, and is evenly supplied with heat when the amorphous silicon is re-crystallized, to thereby slow down the re-crystallization. Also, a manufacturing device has first and second light sources for supplying an optical energy to a-Si formed on substrate. A uniformed and large sized grain can be formed, and specifically, cost reduction is possible since the general glass substrate can be used.

REFERENCES:
patent: 2354591 (1944-07-01), Goldsmith
patent: 4155779 (1979-05-01), Auston et al.
patent: 4234356 (1980-11-01), Auston et al.
patent: 4356384 (1982-10-01), Gat
patent: 4436557 (1984-03-01), Wood et al.
patent: 4851363 (1989-07-01), Troxell et al.
patent: 4880753 (1989-11-01), Meakin et al.
T. Sameshima et al., "XeCl Excimer Laser Annealing Used in the Fabrication of Poly-Si TFT's," IEEE Electron Device Letters vol. EDL-7, No. 5, May 1986, pp. 276-278.
"Low-Temperature Polycrystalline-Silicon TFT on 7059 Glass" IEEE Electron Device Letters, vol. 10, No. 8, Aug. 1989.
T. Hashizume et al., "C-MOS Self-Aligned Low Temperature Poly-Si TFTs Fabricated by Laser Annealing of Poly-Si Films" 22nd Extended Abstract of the Solid State Devices and Materials Conference (1991), pp. 638-640.

Affiliated with

Also associated with

Rating

Manufacturing method and device for a polycrystalline silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method and device for a polycrystalline silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method and device for a polycrystalline silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1705930