Method for forming field oxide or other insulators during the fo

Details Method for forming field oxide or other insulators during the fo Method for forming field oxide or other insulators during the fo

1995-10-11

1997-03-18

Dang, Trung

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

056122489

ABSTRACT:
A method for forming a semiconductor device comprises the steps of forming an oxide over a silicon layer, forming a blanket first nitride layer over the oxide layer and the silicon layer, and etching the first nitride layer and the oxide layer to form a sidewall from at least the oxide layer and the first nitride layer. Next, a second nitride layer is formed over the sidewall and an oxidizable layer is formed over the second nitride layer. The oxidizable and the second nitride layers are etched to form a spacer from the oxidizable layer and the second nitride layer, and the oxidizable and the silicon layers are etched.

REFERENCES:
patent: 4398992 (1983-08-01), Fang et al.
patent: 4563227 (1986-01-01), Sakai et al.
patent: 5254494 (1993-10-01), Van Der Plas et al.
patent: 5318922 (1994-06-01), Lim et al.
patent: 5453397 (1995-09-01), Ema et al.
patent: 5457067 (1995-10-01), Han
patent: 5470783 (1995-11-01), Chiu et al.
patent: 5472906 (1995-12-01), Shimizu et al.

Affiliated with

Also associated with

Rating

Method for forming field oxide or other insulators during the fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming field oxide or other insulators during the fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming field oxide or other insulators during the fo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1705912