Process for producing crystal article

Details Process for producing crystal article Process for producing crystal article

1993-02-25

1993-12-14

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG64, 437 20, 437 61, C30B 2304

Patent

active

052698769

ABSTRACT:
A process for producing a crystal article comprises the step of preparing a substrate having a concavity and a nucleation surface provided thereon, said nucleation surface being constituted of a material which is sufficiently greater in nucleation density than the material constituting the bottom surface of the concavity and having a surface area which is sufficiently small to the extent such only a single nucleus can grow, the step of forming a single nucleus on said nucleation surface and permitting a single crystal to grow by applying crystal growth treatment onto said nucleus, and the step of removing the surface portion of the crystal formed over the upper surface of the convexity of said substrate by selective polishing.

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patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4371421 (1983-02-01), Fan et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
Ogawa et al., "The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask", Jap. J. Appl. Phys. vol. 10, No. 12 (1971), pp. 1675-1679.
Claassen et al., "The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates," J. Electrochem. Soc. vol. 127, No. 1 (1980), pp. 194-202.
Jastrzebski, "SOI by CVD:Epitaxial Lateral Overgrowth (ELO) Process-Review", J. Crys. Growth 63 (1983) pp. 493-526.
CA 83 (2) 20826r "Composition for Polishing Semiconductor Materials" by Kow et al. 1975.
Filby et al. "Single-Crystal Films of Silicon on Insulators" Brit. J. Appl. Phys. vol. 18 1967 pp. 1357-1382.
Calclaser, R. A. "Microelectronics Processing and Device Design" Wiley & Sons 1980 p. 76.

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