Method of adjusting concentration of oxygen in silicon single cr

Details Method of adjusting concentration of oxygen in silicon single cr Method of adjusting concentration of oxygen in silicon single cr

1992-01-24

1993-12-14

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 1566204, 422249, C30B 1514

Patent

active

052698750

ABSTRACT:
Used in a Si crystal pulling apparatus using the Czochralski method, to lower the concentration of oxygen in the Si single crystal without increasing the production cost and to make the concentration substantially even all over the Si single crystal. The crystal 36 is produced by disposing a straightening tube 40 concentrically with and above a quartz crucible 22, letting inert gas flow down through the tube, dipping a seed crystal in Si molten liquid 28 in the quartz crucible and then pulling the seed crystal up. The concentration of oxygen in the Si single crystal is adjusted by controlling the distance H between the surface of the Si molten liquid and the bottom end of the straightening tube in accordance with the pull-up length Y or the pull-up time from a certain growth point of the crystal.

REFERENCES:
patent: 3493770 (1970-02-01), Dessauer et al.
patent: 4207293 (1980-06-01), Scholl et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4417943 (1983-11-01), Jacques et al.
patent: 4710258 (1987-12-01), Latka
patent: 4915773 (1990-04-01), Kravetsky et al.
"Automatic Czochralski Growth, Growth Parameter Measurements and Process Control"; W. Uelhoff; JOurnal of Crystal Growth 65 (1983) pp. 278-279.

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