Variable rate distribution gas flow reaction chamber

Details Variable rate distribution gas flow reaction chamber Variable rate distribution gas flow reaction chamber

1992-05-04

1993-12-14

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

118723R, 118724, 118730, 156345, 156643, H01L 2100

Patent

active

052698475

ABSTRACT:
A wafer processing reactor having an input manifold to enable control of a process gas flow profile over a wafer that is being processed. Both process gas relative concentrations and flow rates can be controlled, thereby enabling an increased uniformity of processing across the wafer.

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"The American Heritage Dictionary", ed., Morris; .COPYRGT.1969, p. 794.
Co-Pending Application entitled "Double-Dome Reactor for Semiconductor Processing" of Roger Anderson et al.; U.S. Ser. No. 07/491,416.

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