Plasma CVD method for depositing tin layer

Details Plasma CVD method for depositing tin layer Plasma CVD method for depositing tin layer

1995-06-13

1998-11-24

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, H01L 2144

Patent

active

058406280

ABSTRACT:
A two-step plasma CVD method is adopted whereby a first TiN layer is deposited in a first plasma CVD process having a low TiCl.sub.4 partial pressure and, subsequently, a second TiN layer is deposited in a second plasma CVD process having a high TiCl.sub.4 partial pressure. By depositing a TiN bimetal layer with excellent step coverage, the amount of chlorine, which is piled up with ease on a boundary surface interfacing with a lower Ti layer, can be reduced, preventing after-corrosion of an Al-based metal layer. On top of that, the small amount of chlorine allows the contact resistance to be reduced.

REFERENCES:
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5508066 (1996-04-01), Akahori
patent: 5545574 (1996-08-01), Chen et al.
patent: 5567243 (1996-10-01), Foster et al.

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