EEPROM with trench-isolated bitlines

Details EEPROM with trench-isolated bitlines EEPROM with trench-isolated bitlines

1989-11-21

1991-09-24

Hille, Rolf

357 236, 357 2311, 357 49, 357 55, H01L 2978

Patent

active

050517953

ABSTRACT:
An electrically-erasable, electrically-programmable ROM or an EEPROM is constructed using a floating-gate transistor with or without a split gate. The floating-gate transistor may have a self-aligned tunnel window of sublithographic dimension positioned on the opposite side of the source from the channel and drain, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. In this cell, the bitlines and source/drain regions are buried beneath relatively thick silicon oxide and the floating gate extends over the thick silicon oxide. Programming and erasing are accomplished by causing electrons to tunnel through the oxide in the tunnel window. The tunnel window has a thinner dielectric than the remainder of the oxides under the floating gate to allow Fowler-Nordheim tunneling. Trenches and ditches are used for electrical isolation between individual memory cells, allowing an increase in cell density.

REFERENCES:
patent: 4590504 (1986-05-01), Guterman
patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4780424 (1988-10-01), Holler et al.
patent: 4835115 (1989-05-01), Eklund
patent: 4853895 (1989-08-01), Mitchell et al.
patent: 4892840 (1990-01-01), Esquivel et al.
patent: 4905062 (1990-02-01), Esquivel et al.
patent: 4912676 (1990-03-01), Paterson et al.
patent: 4924437 (1990-05-01), Paterson et al.
patent: 4942448 (1990-07-01), Tsukamoto et al.
patent: 4947222 (1990-08-01), Gill et al.
patent: 4951103 (1990-08-01), Esquivel et al.

Affiliated with

Also associated with

Rating

EEPROM with trench-isolated bitlines does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM with trench-isolated bitlines, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM with trench-isolated bitlines will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1700379