Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1997-03-19
2000-03-14
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438618, 438620, 438622, 438631, 438637, H01L 2128, H01L 2131
Patent
active
060372443
ABSTRACT:
A method of forming a semiconductor device by using a pillar to form a contact with an active region of the device. A semiconductor device is formed by forming one or more active regions on a substrate of the semiconductor device and forming a pillar over at least a portion of one of the active regions. An insulating film selective to the pillar is provided over portions of the substrate adjacent the pillar. The pillar is then used to form a conductive contact with the active region over which it is formed. In one embodiment, the pillar is formed from a photoresist, while in other embodiments, the pillar is formed from a conductor material such as a metal. The active region may form a source/drain region or a gate electrode.
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Wolf, Stanley, "Silicon Processing for the VLSI Era", vol. 2: Process Integration, 1990, Lattice Press, pp. 102-111.
Gardner Mark I.
Hause Frederick N.
Paiz Robert
Spikes, Jr. Thomas E.
Sun Sey-Ping
Advanced MicroDevices, Inc.
Quach T. N.
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