Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1991-09-13

1993-07-06

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, H01L 2100

Patent

active

052250369

ABSTRACT:
A method of and apparatus for manufacturing a semiconductor device are presented wherein a silicon oxide film on an intermediate semiconductor device is etched out properly without damaging the silicon, under the condition that a difference between the etching speeds of silicon and silicon oxide film becomes small, and immediately thereafter another film is formed on the surface of the silicon with the silicon oxide film removed therefrom.

REFERENCES:
patent: 4180432 (1979-12-01), Clark
patent: 4585517 (1986-04-01), Stemple
patent: 4820377 (1989-04-01), Davis et al.
patent: 4871416 (1989-10-01), Fukuda

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1687146