Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-06-15
1993-07-06
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156651, 156655, 156656, 1566591, 1566611, 156663, 430 5, 430321, 430323, B44C 122, C03C 1500, C03C 2506, C23F 100
Patent
active
052250350
ABSTRACT:
This invention constitutes a method of fabricating a phase-shifting photolithographic mask reticle having identical light transmittance characteristic in all transparent regions. The method is applicable to those types of phase-shifting reticles that are fabricated by masking alternating transparent regions with photoresist and subjecting the exposed transparent regions to a plasma etch until the thicknesses of the transparent reticle material has been relieved to a degree sufficient to effect diffraction cancellation between neighboring transparent regions. This invention solves the problem of unequal transmittance characteristics of plasma etched transparent regions and unetched transparent regions by subjecting the reticle to a second plasma etch once the photoresist has been removed. Thus, both the transparent regions that were initially etched and the transparent regions that were initially unetched are subjected to an etch. Both types of regions are relieved further, thus maintaining the phase-shifted relationship between the two types of transparent regions, and also equalizing the transmittance characteristics of both types of transparent regions.
REFERENCES:
patent: 4530736 (1985-07-01), Mutter
patent: 4988404 (1991-01-01), Aoyagi
patent: 5024726 (1991-06-01), Fujiwara
Yamanaka, et al., "A 5.9 Micrometer.sup.2 Super Low Power SRAM Cell Using a New Phase-Shifting Lithography" IEDM 90 (Apr., 1990) p. 477.
Watanabe, et al., "Transparent Phase Shifting Mask", IEDM 90 (Apr., 1990), p. 821.
Nitayama, et al., "New Phase Shifting Mask with Self-aligned Phase Shifters for a Quarter Micron Photolithograph", IEDM 89 (Jul., 1989), p. 57.
Lin, Burn J., "Phase Shifting and Other Challenges in Optical Mask Technology", IBM-EF-15 (Sep. 26, 1990).
Jinbo, et al., "0.2 .mu.m or Less i-Line lithography by Phase-Shifting-Mask Technology", IEDM 90 (Apr., 1990), p. 825.
Fox III Angus C.
Micro)n Technology, Inc.
Powell William A.
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