Method for growing a silicon carbide single crystal

Details Method for growing a silicon carbide single crystal Method for growing a silicon carbide single crystal

1992-03-20

1994-02-22

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 437100, C30B 2500

Patent

active

052883655

ABSTRACT:
A method for growing a silicon carbide single crystal on a seed crystal using a molecular beam source in vacuo by means of a molecular beam epitaxy, wherein a material in the molecular beam source is silicon carbide. A silicon molecular beam source and/or an impurity molecular beam source for doping may be further used. Temperatures of the silicon carbide molecular beam source, the silicon molecular beam source, the impurity molecular beam source and the seed crystal are independently controlled. Vapor compositions are controlled by the silicon carbide molecular beam source, the silicon molecular beam source and the impurity molecular beam source.

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patent: 5230768 (1993-07-01), Furukawa et al.
Tairov et al., Journal of Crystal Growth (1981) 52:146-150.
Ziegler et al., IEEE Transactions on Electron Devices (1983) ED-30(4):277-281.

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