Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-07-07

1999-06-08

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257219, 257220, 257221, 257224, 257285, H01L 2176

Patent

active

059106727

ABSTRACT:
This invention provides a semiconductor device with a SOI structure and a method of manufacturing the same, preventing deterioration in and making improvement in device characteristics. Nitrogen ion implantation into NMOS and PMOS regions (NR, PR) with resists (22b) and (22c) as masks, respectively, introduces nitrogen ions into channel doped layers (31). The subsequent thermal treatment provides a structure with the channel doped layers (31) containing nitrogen having a prescribed concentration distribution in the depth direction.

REFERENCES:
patent: 4772927 (1988-09-01), Saito et al.
patent: 5266816 (1993-11-01), Seto et al.
patent: 5468657 (1995-11-01), Hsu
patent: 5581092 (1996-12-01), Takemura
Yamaguchi, Y., et al., "Improvement of Leakage-Current-Related Yield of SOI MOSFET's Using Nitrogen Ion-Implantation to the Source and Drain Regions", Proceedings 1996 IEEE International SOI Conference, Oct. 1996, pp. 168-169.
Furukawa, A., et al., "Channel Engineering in Sub-quarter-micron MOSFETs Using Nitrogen Implantation for Low Voltage Operation", 1996 Symposium on VLSI Technology Digest Of Technical Papers, 1996, pp. 62-63.

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