Strain-based control of crystal anisotropy for perovskite oxides

Details Strain-based control of crystal anisotropy for perovskite oxides Strain-based control of crystal anisotropy for perovskite oxides

1998-07-30

2000-02-08

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257627, H01L 2978, H01L 2904

Patent

active

060230827

ABSTRACT:
A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

REFERENCES:
patent: 5225031 (1993-07-01), McKee et al.
patent: 5323023 (1994-06-01), Fork
patent: 5450812 (1995-09-01), McKee et al.
patent: 5567979 (1996-10-01), Nashimoto
patent: 5650646 (1997-07-01), Summerfelt

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