Method of fabricating semiconductor device with a multi-layered

Details Method of fabricating semiconductor device with a multi-layered Method of fabricating semiconductor device with a multi-layered

1996-11-08

2000-02-08

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438635, 438676, 438728, 438710, 438722, 20419232, 20419235, H01L 21302, H01L 21461, C23C 1400

Patent

active

060228059

ABSTRACT:
A method of fabricating a semiconductor device includes the step of removing native oxide on the surface of a metal silicide layer formed on a shallow impurity diffusion layer and exposed at the bottom portion of a contact hole by sputter etching under an incident ion condition of a high density and a low energy. In this sputter etching, the side surface of the contact hole is prevented from being sputtered and re-deposited on the bottom portion of the contact hole, whereby the native oxide is effectively removed while the impurity diffusion layer is prevented from being damaged. In addition, a substrate may be heated during sputter etching for preventing ion species such as Ar.sup.+ from being entrapped in the metal silicide layer.

REFERENCES:
patent: 5298446 (1994-03-01), Onishi et al.
patent: 5403434 (1995-04-01), Moslehi
patent: 5447613 (1995-09-01), Ouellet
patent: 5726097 (1998-03-01), Yamagida

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