Fabrication method for semiconductor apparatus

Details Fabrication method for semiconductor apparatus Fabrication method for semiconductor apparatus

1997-02-26

2000-02-08

Gulakowski, Randy

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438694, 438710, 438713, 216 39, 216 40, 216 67, 216 70, 118723EB, H01L 21027

Patent

active

060228032

ABSTRACT:
In a fabrication method of a semiconductor apparatus, the semiconductor apparatus is made with a selective gold plating process rather than an ion-milling process. A tungsten film (W film) as a current supplying layer is formed on the entire front surface of an insulation film. The insulation film is formed on a GaAs substrate on which devices such as FETs are formed. With a mask of a photoresist film, a titanium (Ti) film, a platinum (Pt) film, and a gold (Au) film are successively evaporated and then lift-off process is performed. A photoresist film is patterned. A gold plate film with a thickness of 8 .mu.m is formed. The current supplying layer is removed by magnetron discharge plasma ion-etching process. Thick U-shaped gold plate lines are formed.

REFERENCES:
patent: 3822467 (1974-07-01), Symersky
patent: 5340773 (1994-08-01), Yamamoto
patent: 5618754 (1997-04-01), Kasahara
Hirano et al., "Folded U-Shaped Micro-Wire Technology for GaAs ICs", The Inst. of Elec., Info., and Communication Engineers of Japan, Dec. 1992 Autumn Conference Report Separate Issue 2, p. 2-420.

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