Semiconductor device having bipolar transistor and MOS transisto

Details Semiconductor device having bipolar transistor and MOS transisto Semiconductor device having bipolar transistor and MOS transisto

1994-10-26

1996-02-27

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, H01L 2976, H01L 2994

Patent

active

054951208

ABSTRACT:
In a semiconductor device having a bipolar transistor including, on a main surface of a semiconductor substrate, the bipolar transistor and an impurity region of a conductivity type which is different from that of a base region of this bipolar transistor, an impurity for forming the base region is implanted into the entire main surface of a semiconductor substrate to form the base region. Accordingly, the manufacturing costs can be reduced without degrading the performance of the device.

REFERENCES:
patent: 4514747 (1985-04-01), Miyata et al.
patent: 4717686 (1988-01-01), Jacobs et al.
patent: 5059549 (1991-10-01), Furuhata
patent: 5286991 (1994-02-01), Hui et al.
"High Performance 1.0 um N-Well CMOS/Bipolar Technology", H. Momose et al., Symposium on VLSI Technology Sep. 1983.
"A 1.0 um N-Well CMOS/Bipolar Technology for VLSI Cicuits", J. Miyamoto et al., IEDM Digest of Technical Papers, Dec. 1983.
"High Speed BICMOS VLSI Technology With Buried Twin Well Structure", J. Watanabe et al., EIDM 85.
"High-Speed Bipolar Transistor Compatible With High-Speed CMOS FET Technology", H. Iwasaki et al., Toshiba Review 1985.
"0.8 um BI-CMOS Technology With f.sub.T Ion-Implanted Emitter Bipolar Transistor", H. Iwai et al, IEDM 87.

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