Method of producing silicon layer having surface controlled to b

Details Method of producing silicon layer having surface controlled to b Method of producing silicon layer having surface controlled to b

1997-04-02

1999-06-08

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

438482, 438486, 438489, 438442, 438481, 438488, H01L 2100

Patent

active

059100192

ABSTRACT:
A method of forming a silicon layer disclosed herein includes the steps of depositing an amorphous silicon layer on a substrate, irradiating a silane gas to the substrate, and performing an annealing process in a high vacuum or in an inert gas. The amorphous silicon layer is thereby converted into a silicon layer having an uneven surface caused by hemispherical or spherical silicon grains. The annealing process may be performed while irradiating a hydrogen gas or an oxidizing gas. In this case, such a silicon layer that has an even surface is formed.

REFERENCES:
patent: 4497683 (1985-02-01), Celler et al.
patent: 4966861 (1990-10-01), Mieno et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5561074 (1996-10-01), Koide et al.

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