Method of manufacturing cobalt silicide layer

Details Method of manufacturing cobalt silicide layer Method of manufacturing cobalt silicide layer

1998-03-18

2000-02-08

Meeks, Timothy

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

438680, 438682, 438763, 42725527, 4272554, 4273762, C23C 1434

Patent

active

060224576

ABSTRACT:
A method of manufacturing a cobalt suicide layer in the present invention has a silicon layer formation step. The silicon layer is formed at the interface between the cobalt layer and titanium layer, therefore the interface is smoother in this invention than in other conventional methods, and there are no voids formed at the interface. Moreover, consumption of the silicon can be controlled by adjusting the thickness of the silicon layer.

REFERENCES:
patent: 5047367 (1991-09-01), Wei et al.
patent: 5266156 (1993-11-01), Nasr

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