Semiconductor device having different sidewall widths and differ

Details Semiconductor device having different sidewall widths and differ Semiconductor device having different sidewall widths and differ

1998-02-05

1999-11-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, H01L 2976

Patent

active

059947438

ABSTRACT:
A CMOS device includes a first conductive type channel MOSFET having first side-wall spacers on side surfaces and having a source and drain region of an LDD structure, and a second conductive type channel MOSFET having second side-wall spacers on side surfaces and having a source and drain region of a single drain structure, wherein a width of the first side-wall spacers is larger than that of the second side-wall spacers, restraining the short channel effect and hot carrier effect as well.

REFERENCES:
patent: 4577391 (1986-03-01), Hsia et al.
patent: 5296401 (1994-03-01), Mitsui et al.

Affiliated with

Also associated with

Rating

Semiconductor device having different sidewall widths and differ does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having different sidewall widths and differ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having different sidewall widths and differ will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1675985