Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-01-04
1999-11-30
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, 257347, 257350, 257369, 257401, 257302, 257306, H01L 2976, H01L 2701, H01L 2994, H01L 27108
Patent
active
059947357
ABSTRACT:
A field effect transistor occupying a small area and a semiconductor device using the same can be obtained. A gate electrode is provided on a substrate on which a source region is provided with a first interlayer insulating film interposed therebetween. The gate electrode is covered with a second interlayer insulating film. A contact hole for exposing a part of the surface of the source region is provided so as to penetrate through the first interlayer insulating film, the gate electrode, and the second interlayer insulating film. A sidewall surface of the contact hole is covered with a gate insulating film. A first semiconductor layer of a first conductivity type is provided on the surface of the source region in contact therewith up to the lower surface of the gate electrode. A channel semiconductor layer is provided on the surface of the first semiconductor layer up to the upper surface of the gate electrode. A second semiconductor layer of a first conductivity type serving as a drain region is provided on the channel semiconductor layer.
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Impact of Surrounding Gate Transistor (SGT) For Ultra-High-Density LSI's, Hiroshi Takato et al., IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, pp. 573-578.
Silicon-On-Insulator "Gate-All-Around Device", J.P. Colinge et al., IEEE, 1990, pp. 25.4.1-25.4.4.
Kuriyama Hirotada
Maeda Shigenobu
Maegawa Shigeto
Yamaguchi Yasuo
Loke Steven H.
Mitsubishi Denki & Kabushiki Kaisha
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