Field effect transistor and method for producing the same

Details Field effect transistor and method for producing the same Field effect transistor and method for producing the same

1996-11-14

1999-11-30

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257217, 257267, H01L 2972

Patent

active

059947284

ABSTRACT:
A method for producing a field effect transistor includes: a first step of forming an insulating film over a substrate; a second step of dry etching the insulating film to form a rectangular insulating pattern having side surfaces; a third step of forming a gate electrode film over the substrate having the rectangular insulating pattern; a fourth step of conducting substantially anisotropic etching of the gate electrode film to form side walls made of the gate electrode film adjacent to the side surfaces of the rectangular insulating pattern; and a fifth step of removing at least a portion of the insulating pattern to form a side wall gate.

REFERENCES:
patent: 4654680 (1987-03-01), Yamazaki
patent: 4721988 (1988-01-01), Yamazaki
patent: 5385857 (1995-01-01), Zaldivar

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