Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-16
1999-11-30
Fahmy, Wael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438648, 438656, 438660, 438688, H01L 21477
Patent
active
059942177
ABSTRACT:
An heat treatment (anneal) process is provided that reduces stress in a metal layer structure having ARC TiN layer overlaying an aluminum layer formed in a high temperature process. An metal layer 32 composed of Al/Cu/Si is sputtered at a temperature of about 505.degree. C. on a semiconductor structure 10. Next, an ARC TiN layer 34 is deposited over the metal layer 32. In an important process, a heat treatment (anneal) is performed on the metal layer 32 and the ARC TiN layer 34. The heat treatment comprises three steps. First, a ramp up step is performed wherein the temperature is increased from room temperature to a temperature of about 450.degree. C. at a rate of about 40.degree. C./sec. Second, a temperature hold step is performed where the temperature is held at about 450.degree. C. for a time of about 30 seconds. Third, a ramp down step is performed where the temperature is ramped down at rate in a range of between about 8 and 10.degree. C./sec to room temperature. The heat treatment anneal of the present invention reduces the stress between the ARC TiN and Al layers which eliminates any peeling and blemishing of the ARC TiN layer.
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Chartered Semiconductor Manufacturing Ltd.
Eaton Kurt
Fahmy Wael
Pike Rosemary L.S.
Saile George O.
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