Doping in crystalline diamond substrates

Details Doping in crystalline diamond substrates Doping in crystalline diamond substrates

1997-09-22

1999-11-30

Mulpuri, Savitri

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

H01L 21265

Patent

active

059942088

ABSTRACT:
A crystalline substrate such as diamond, cubic boron nitride or silicon carbide is doped with a dopant atom such as boron, phosphorus or arsenic. The method includes the steps of creating a first damaged layer containing vacancies and interstitial atoms in the crystal lattice of the crystalline substrate, implanting the dopant atoms under conditions to create a second damaged layer separate from the first damaged layer and containing the dopant atoms, and causing the dopant atoms in the second layer to diffuse out of that layer and into vacancies in the first layer and thereby occupy substitutional positions in that layer.

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"Doping of Diamond by Coimplantion of Carbon and Boron"; Sandhu et al, App. Phys. Letts 55(14) Oct. 2, 1989 pp. 1397-1399.

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