Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1988-01-11
1989-03-07
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
156627, 204298, C23F 400
Patent
active
048103357
ABSTRACT:
The method for monitoring an end point of an etching process of electrically insulating layers effected by ions, radicals and/or neutral particles in a plasma is accomplished with the assistance of a reference substrate having a defined specimen geometry which is situated on a mobile substrate holder with the layers to be etched. The electrical resistance is measured and a voltage drop of a known constant current is impressed at known time intervals onto an electrically conductive layer lying under the layer to be etched. Measurement of the voltage drop is continued until an injection current is additionally injected into the conductive layer by the plasma to change the voltage drop. Test data is transmitted in non-contacting fashion by pulse code modulated electromagnetic radiation using a telemetry system so that the movable substrate is an independent unit. A process control computer controls the etching process via the etching rate by local monitoring of the end point of the etching carried out in the plasma.
REFERENCES:
patent: 4358338 (1982-11-01), Downey et al.
patent: 4543576 (1985-09-01), Hieber et al.
patent: 4562089 (1985-12-01), Hieber et al.
E. Bretscher et al, IBM Tech. Disc. Bull., vol. 24, pp. 3653-3654 (1981).
Chapter entitled "Dry Etching" of textbook by C. Sze titled VLSI Technology, pp. 304-307, 334 (1984).
Article by R. M. Clements, "Plasma Diagnostics with Electric Probes", Journal of Vacuum Science Tech., vol. 15, No. 2, Mar./Apr. 1978, pp. 193-198.
Co-pending U.S. application Ser. No. 113,829., filed on Oct. 29, 1987, entitled "Method for Controlling and Supervising Etching Processes".
Siemens Aktiengesellschaft
Weisstuch Aaron
LandOfFree
Method for monitoring etching processes does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for monitoring etching processes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for monitoring etching processes will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1666381