Semiconductor device

Details Semiconductor device Semiconductor device

Filed on

1997-03-04

Date issued

1998-07-21

Examiner

Prenty, Mark V.

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

257357, 257369, 361 91, H01L 2968

Type

Patent

Status

active

Patent number

057838518

Description

ABSTRACT:
Between an external terminal and the gate of one of output MOSFETs whose source or drain is connected to the external terminal, there is connected a P-channel type first protective MOSFET whose gate is connected to a high voltage side power supply terminal and which has a channel length equal to or larger than that of the output MOSFET, or an N-channel type second protective MOSFET whose gate is connected to a low voltage side power supply terminal and which has a channel length equal to or larger then that of the output MOSFET. When the external terminal is discharged by device charge, one of the protective MOSFETs is turned on, and the charge on the gate side of the output MOSFET can be likewise released by device charge to prevent ESD (Electro-Static Discharge) breakdown.

REFERENCES:
patent: 5495118 (1996-02-01), Kinoshita et al.
patent: 5625214 (1997-04-01), Kinoshita et al.

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